2SD Transistor Datasheet pdf, 2SD Equivalent. Parameters and Characteristics. 2SD NPN SILICON TRANSISTOR. UNISONIC TECHNOLOGIES CO., LTD. 2 of 3 QW-RG. ▫ ABSOLUTE MAXIMUM. Power Transistor (80V, 1A). 2SD / 2SD / 2SDS / 2SD ○ Features. 1) High VCEO, VCEO=80V. 2) High IC, IC=1A (DC). 3) Good hFE linearity.
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The peripheral conditions must be taken into account when designing circuits for mass production. Emitter Current 10 0. Product overview Type number More information.
V CE sat [V] Fig. General description NPN general-purpose transistors in small plastic packages. General description PNP general-purpose transistors.
Quick reference data Rev. NPN general-purpose transistors in small plastic packages. C 3,4 Features Low surge, low More information. Features Low Saturation Voltage Excellent.
Collector Current I Fig. ROHM shall hav no rsponsibility for any damags or injury arising from non-complianc with th rcommndd usag conditions and spcifications containd hrin. Product specification Supersedes data of Feb NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with More information.
F Notice Notes 1 The information contained herein is subject to change without notice. Ground Emittr Propagation Charactristics Fig. Plas us th Products in accordanc with any applicabl nvironmntal laws and rgulations, such as th RoHS Dirctiv.
C 3,4 Features Low surge, low. Characteristic Symbol Rating Unit. For us of our Products in applications rquiring a high dgr of rliability as xmplifid blowplas contact and consult with a ROHM rprsntativ: To make this website work, we log user data and share it with processors. Circuit diagram 9 8 N.
This Datasheet is presented by the m anufacturer. Product data sheet Supersedes data of Jan It is intended for telecommunications More information. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations.
2SD Datasheet(PDF) – SeCoS Halbleitertechnologie GmbH
V BE sat [V] 0. Exampls of application circuits, circuit constants and any othr information containd hrin ar providd only to illustrat th standard usag and oprations of th Products. IC [A] 2SD 10ms 1 0. Th Products spcifid in this documnt ar not dsignd to b radiation tolrant. Designed for use in general purpose power amplifier and switching applications. Product overview Type number. These are Pb Free Devices.
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ROHM shall hav no rsponsibility for any damags or losss rsulting non-complianc with any applicabl laws or rgulations. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties.
High voltage fast-switching NPN power transistor. Designed for general-purpose amplifier datssheet low speed switching applications. The product s described herein should not be used for any other application. All leads are isolated. Sourced from Process Packaging type SST3 Marking. Please v isit our website for pricing and availability at www. Thank you for your accssing to ROHM product informations. This device ratasheet specifically designed More information.
Do not us our Products in applications rquiring xtrmly high rliability, such as arospac quipmnt, nuclar powr control systms, and submarin rpatrs. NPN transistors Applications Audio, general purpose switching and amplifier transistors Description The devices are manufactured in Planar technology with.
(PDF) 2SD1898 Datasheet download
Collctor Currnt I Fig. Product specification Supersedes data of May It’s a community-based project which helps to repair anything. Th priphral conditions must b takn into account whn dsigning circuits for mass production. Low voltage Catasheet power Darlington transistor. Features High DC More information. Start display at page:.